Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NVB6412ANT4G

NVB6412ANT4G

For Reference Only

Part Number NVB6412ANT4G
PNEDA Part # NVB6412ANT4G
Description MOSFET N-CH 100V 59A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,046
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 9 - May 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVB6412ANT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVB6412ANT4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVB6412ANT4G, NVB6412ANT4G Datasheet (Total Pages: 7, Size: 81.35 KB)
PDFNVB6412ANT4G Datasheet Cover
NVB6412ANT4G Datasheet Page 2 NVB6412ANT4G Datasheet Page 3 NVB6412ANT4G Datasheet Page 4 NVB6412ANT4G Datasheet Page 5 NVB6412ANT4G Datasheet Page 6 NVB6412ANT4G Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NVB6412ANT4G Datasheet
  • where to find NVB6412ANT4G
  • ON Semiconductor

  • ON Semiconductor NVB6412ANT4G
  • NVB6412ANT4G PDF Datasheet
  • NVB6412ANT4G Stock

  • NVB6412ANT4G Pinout
  • Datasheet NVB6412ANT4G
  • NVB6412ANT4G Supplier

  • ON Semiconductor Distributor
  • NVB6412ANT4G Price
  • NVB6412ANT4G Distributor

NVB6412ANT4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18.2mOhm @ 58A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 25V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

AOTF11S60_900

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

TSM120N06LCR RLG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

54A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2116pF @ 30V

FET Feature

-

Power Dissipation (Max)

69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PDFN (5x6)

Package / Case

8-PowerTDFN

NTLGF3501NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

FETKY™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

90mOhm @ 3.4A, 4.5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

275pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.14W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-DFN (3x3)

Package / Case

6-VDFN Exposed Pad

BSH103,235

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

850mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V

Rds On (Max) @ Id, Vgs

400mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id

400mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

83pF @ 24V

FET Feature

-

Power Dissipation (Max)

540mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB

Package / Case

TO-236-3, SC-59, SOT-23-3

SIHG32N50D-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

96nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2550pF @ 100V

FET Feature

-

Power Dissipation (Max)

390W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Recently Sold

SMAJ36A

SMAJ36A

Bourns

TVS DIODE 36V 58.1V SMA

3-1462039-1

3-1462039-1

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 12VDC

LTST-C150KFKT

LTST-C150KFKT

Lite-On Inc.

LED ORANGE CLEAR 1206 SMD

AT45DB161D-SU

AT45DB161D-SU

Adesto Technologies

IC FLASH 16M SPI 66MHZ 8SOIC

FMG2G400US60

FMG2G400US60

ON Semiconductor

IGBT MOLDING 600V 400A 7PM-IA

74HC4051D

74HC4051D

Toshiba Semiconductor and Storage

IC MUX 8:1 4 OHM 16SOIC

PE-64934NL

PE-64934NL

Pulse Electronics Network

XFRMR T1/CEPT/ISDN-PRI 1:1

RCLAMP0524P.TCT

RCLAMP0524P.TCT

Semtech

TVS DIODE 5V 15V SLP2510P8

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

LTC3882EUJ#PBF

LTC3882EUJ#PBF

Linear Technology/Analog Devices

IC REG CTRLR BUCK PMBUS 40QFN

C8051F126-GQR

C8051F126-GQR

Silicon Labs

IC MCU 8BIT 128KB FLASH 100TQFP

744232161

744232161

Wurth Electronics

CMC 340MA 2LN 160 OHM SMD