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NVB6412ANT4G

NVB6412ANT4G

For Reference Only

Part Number NVB6412ANT4G
PNEDA Part # NVB6412ANT4G
Description MOSFET N-CH 100V 59A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,046
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVB6412ANT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVB6412ANT4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVB6412ANT4G, NVB6412ANT4G Datasheet (Total Pages: 7, Size: 81.35 KB)
PDFNVB6412ANT4G Datasheet Cover
NVB6412ANT4G Datasheet Page 2 NVB6412ANT4G Datasheet Page 3 NVB6412ANT4G Datasheet Page 4 NVB6412ANT4G Datasheet Page 5 NVB6412ANT4G Datasheet Page 6 NVB6412ANT4G Datasheet Page 7

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NVB6412ANT4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs18.2mOhm @ 58A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 25V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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