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NVC3S5A51PLZT1G

NVC3S5A51PLZT1G

For Reference Only

Part Number NVC3S5A51PLZT1G
PNEDA Part # NVC3S5A51PLZT1G
Description MOSFET P-CHANNEL 60V 1.8A 3-CPH
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 50,922
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVC3S5A51PLZT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVC3S5A51PLZT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVC3S5A51PLZT1G, NVC3S5A51PLZT1G Datasheet (Total Pages: 6, Size: 848.23 KB)
PDFNVC3S5A51PLZT1G Datasheet Cover
NVC3S5A51PLZT1G Datasheet Page 2 NVC3S5A51PLZT1G Datasheet Page 3 NVC3S5A51PLZT1G Datasheet Page 4 NVC3S5A51PLZT1G Datasheet Page 5 NVC3S5A51PLZT1G Datasheet Page 6

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NVC3S5A51PLZT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds262pF @ 20V
FET Feature-
Power Dissipation (Max)1.2W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-CPH
Package / CaseTO-236-3, SC-59, SOT-23-3

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