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NVC6S5A354PLZT1G

NVC6S5A354PLZT1G

For Reference Only

Part Number NVC6S5A354PLZT1G
PNEDA Part # NVC6S5A354PLZT1G
Description MOSFET P-CHANNEL 60V 4A 6-CPH
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 28,548
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVC6S5A354PLZT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVC6S5A354PLZT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVC6S5A354PLZT1G, NVC6S5A354PLZT1G Datasheet (Total Pages: 6, Size: 730.38 KB)
PDFNVC6S5A354PLZT1G Datasheet Cover
NVC6S5A354PLZT1G Datasheet Page 2 NVC6S5A354PLZT1G Datasheet Page 3 NVC6S5A354PLZT1G Datasheet Page 4 NVC6S5A354PLZT1G Datasheet Page 5 NVC6S5A354PLZT1G Datasheet Page 6

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NVC6S5A354PLZT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 20V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-CPH
Package / CaseSOT-23-6 Thin, TSOT-23-6

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