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NVD3055L170T4G-VF01

NVD3055L170T4G-VF01

For Reference Only

Part Number NVD3055L170T4G-VF01
PNEDA Part # NVD3055L170T4G-VF01
Description MOSFET N-CH 60V 9A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,844
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVD3055L170T4G-VF01 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVD3055L170T4G-VF01
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVD3055L170T4G-VF01, NVD3055L170T4G-VF01 Datasheet (Total Pages: 10, Size: 146.7 KB)
PDFNTD3055L170G Datasheet Cover
NTD3055L170G Datasheet Page 2 NTD3055L170G Datasheet Page 3 NTD3055L170G Datasheet Page 4 NTD3055L170G Datasheet Page 5 NTD3055L170G Datasheet Page 6 NTD3055L170G Datasheet Page 7 NTD3055L170G Datasheet Page 8 NTD3055L170G Datasheet Page 9 NTD3055L170G Datasheet Page 10

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NVD3055L170T4G-VF01 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs170mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds275pF @ 25V
FET Feature-
Power Dissipation (Max)28.5W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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