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NVD5807NT4G-VF01

NVD5807NT4G-VF01

For Reference Only

Part Number NVD5807NT4G-VF01
PNEDA Part # NVD5807NT4G-VF01
Description MOSFET N-CH 40V 23A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVD5807NT4G-VF01 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVD5807NT4G-VF01
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVD5807NT4G-VF01, NVD5807NT4G-VF01 Datasheet (Total Pages: 7, Size: 118.3 KB)
PDFNTD5807NT4G Datasheet Cover
NTD5807NT4G Datasheet Page 2 NTD5807NT4G Datasheet Page 3 NTD5807NT4G Datasheet Page 4 NTD5807NT4G Datasheet Page 5 NTD5807NT4G Datasheet Page 6 NTD5807NT4G Datasheet Page 7

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NVD5807NT4G-VF01 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds603pF @ 25V
FET Feature-
Power Dissipation (Max)33W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK (SINGLE GAUGE)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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