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NVD5867NLT4G

NVD5867NLT4G

For Reference Only

Part Number NVD5867NLT4G
PNEDA Part # NVD5867NLT4G
Description MOSFET N-CH 60V DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 53,340
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVD5867NLT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVD5867NLT4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVD5867NLT4G, NVD5867NLT4G Datasheet (Total Pages: 6, Size: 71.66 KB)
PDFNVD5867NLT4G Datasheet Cover
NVD5867NLT4G Datasheet Page 2 NVD5867NLT4G Datasheet Page 3 NVD5867NLT4G Datasheet Page 4 NVD5867NLT4G Datasheet Page 5 NVD5867NLT4G Datasheet Page 6

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NVD5867NLT4G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C6A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs39mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds675pF @ 25V
FET Feature-
Power Dissipation (Max)3.3W (Ta), 43W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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