Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NVD5890NT4G

NVD5890NT4G

For Reference Only

Part Number NVD5890NT4G
PNEDA Part # NVD5890NT4G
Description MOSFET N-CH 40V 100A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,244
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVD5890NT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVD5890NT4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVD5890NT4G, NVD5890NT4G Datasheet (Total Pages: 7, Size: 117.99 KB)
PDFNVD5890NT4G Datasheet Cover
NVD5890NT4G Datasheet Page 2 NVD5890NT4G Datasheet Page 3 NVD5890NT4G Datasheet Page 4 NVD5890NT4G Datasheet Page 5 NVD5890NT4G Datasheet Page 6 NVD5890NT4G Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NVD5890NT4G Datasheet
  • where to find NVD5890NT4G
  • ON Semiconductor

  • ON Semiconductor NVD5890NT4G
  • NVD5890NT4G PDF Datasheet
  • NVD5890NT4G Stock

  • NVD5890NT4G Pinout
  • Datasheet NVD5890NT4G
  • NVD5890NT4G Supplier

  • ON Semiconductor Distributor
  • NVD5890NT4G Price
  • NVD5890NT4G Distributor

NVD5890NT4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C24A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4760pF @ 25V
FET Feature-
Power Dissipation (Max)4W (Ta), 107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

FQP11N40

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

11.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1400pF @ 25V

FET Feature

-

Power Dissipation (Max)

147W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

BUK7611-55A,118

Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101, TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3093pF @ 25V

FET Feature

-

Power Dissipation (Max)

166W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NVMFS5C426NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 128W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN

Manufacturer

Nexperia USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

57A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2404pF @ 50V

FET Feature

-

Power Dissipation (Max)

148W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SIHG22N50D-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

230mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

98nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1938pF @ 100V

FET Feature

-

Power Dissipation (Max)

312W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

Recently Sold

VMMK-1218-TR1G

VMMK-1218-TR1G

Broadcom

FET RF 5V 10GHZ 0402

MC9S08LL8CLF

MC9S08LL8CLF

NXP

IC MCU 8BIT 10KB FLASH 48LQFP

LPC2388FBD144,551

LPC2388FBD144,551

NXP

IC MCU 32BIT 512KB FLASH 144LQFP

MBR140SFT1

MBR140SFT1

ON Semiconductor

DIODE SCHOTTKY 40V 1A SOD123L

BAT54-7-F

BAT54-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT23-3

SMBJ15A

SMBJ15A

Microsemi

TVS DIODE 15V 24.4V DO214AA

ES3J

ES3J

SMC Diode Solutions

SMT SUPER FAST RECTIFIER

JS28F128J3F75A

JS28F128J3F75A

Micron Technology Inc.

IC FLASH 128M PARALLEL 56TSOP

HX1188FNLT

HX1188FNLT

Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

MAX9910EXK+T

MAX9910EXK+T

Maxim Integrated

IC OPAMP GP 1 CIRCUIT SC70-5

SMP253MA4470MTR24

SMP253MA4470MTR24

KEMET

CAP FILM 4700PF 20% 250VDC SMD

MCP4921T-E/SN

MCP4921T-E/SN

Microchip Technology

IC DAC 12BIT V-OUT 8SOIC