NVHL082N65S3F
For Reference Only
| Part Number | NVHL082N65S3F |
| PNEDA Part # | NVHL082N65S3F |
| Description | SUPERFET3 650V FRFET82MO |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,906 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NVHL082N65S3F Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NVHL082N65S3F |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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NVHL082N65S3F Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101, SuperFET® III, FRFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 4mA |
| Gate Charge (Qg) (Max) @ Vgs | 81nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3410pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7670pF @ 50V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 120mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 476pF @ 10V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
