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NVMFS5832NLWFT1G

NVMFS5832NLWFT1G

For Reference Only

Part Number NVMFS5832NLWFT1G
PNEDA Part # NVMFS5832NLWFT1G
Description MOSFET N-CH 40V 120A SO8FL
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,974
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 13 - Jul 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS5832NLWFT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS5832NLWFT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS5832NLWFT1G, NVMFS5832NLWFT1G Datasheet (Total Pages: 6, Size: 114.46 KB)
PDFNVMFS5832NLWFT3G Datasheet Cover
NVMFS5832NLWFT3G Datasheet Page 2 NVMFS5832NLWFT3G Datasheet Page 3 NVMFS5832NLWFT3G Datasheet Page 4 NVMFS5832NLWFT3G Datasheet Page 5 NVMFS5832NLWFT3G Datasheet Page 6

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NVMFS5832NLWFT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C21A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs51nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 127W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

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