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NVMFS5H663NLT1G

NVMFS5H663NLT1G

For Reference Only

Part Number NVMFS5H663NLT1G
PNEDA Part # NVMFS5H663NLT1G
Description T8 60V LOW COSS
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 14,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS5H663NLT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS5H663NLT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS5H663NLT1G, NVMFS5H663NLT1G Datasheet (Total Pages: 7, Size: 131.97 KB)
PDFNVMFS5H663NLWFT1G Datasheet Cover
NVMFS5H663NLWFT1G Datasheet Page 2 NVMFS5H663NLWFT1G Datasheet Page 3 NVMFS5H663NLWFT1G Datasheet Page 4 NVMFS5H663NLWFT1G Datasheet Page 5 NVMFS5H663NLWFT1G Datasheet Page 6 NVMFS5H663NLWFT1G Datasheet Page 7

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NVMFS5H663NLT1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C16.2A (Ta), 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 56µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1131pF @ 30V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 63W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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