Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NVMFS6H801NT1G

NVMFS6H801NT1G

For Reference Only

Part Number NVMFS6H801NT1G
PNEDA Part # NVMFS6H801NT1G
Description TRENCH 8 80V NFET
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,086
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS6H801NT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS6H801NT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS6H801NT1G, NVMFS6H801NT1G Datasheet (Total Pages: 6, Size: 159.4 KB)
PDFNVMFS6H801NWFT1G Datasheet Cover
NVMFS6H801NWFT1G Datasheet Page 2 NVMFS6H801NWFT1G Datasheet Page 3 NVMFS6H801NWFT1G Datasheet Page 4 NVMFS6H801NWFT1G Datasheet Page 5 NVMFS6H801NWFT1G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NVMFS6H801NT1G Datasheet
  • where to find NVMFS6H801NT1G
  • ON Semiconductor

  • ON Semiconductor NVMFS6H801NT1G
  • NVMFS6H801NT1G PDF Datasheet
  • NVMFS6H801NT1G Stock

  • NVMFS6H801NT1G Pinout
  • Datasheet NVMFS6H801NT1G
  • NVMFS6H801NT1G Supplier

  • ON Semiconductor Distributor
  • NVMFS6H801NT1G Price
  • NVMFS6H801NT1G Distributor

NVMFS6H801NT1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4120pF @ 40V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 166W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2040pF @ 25V

FET Feature

-

Power Dissipation (Max)

347W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

TK7A45DA(STA4,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSVII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

450V

Current - Continuous Drain (Id) @ 25°C

6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 3.3A, 10V

Vgs(th) (Max) @ Id

4.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

STB60NF10T4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

104nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4270pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFD9020PBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 960mA, 10V

Vgs(th) (Max) @ Id

4V @ 1µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

570pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)

TSM1N45CW RPG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

450V

Current - Continuous Drain (Id) @ 25°C

500mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.25Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id

4.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

235pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

Recently Sold

TCN4337M016R0070

TCN4337M016R0070

CAP TANT POLY 330UF 20% 16V 2924

MCR03EZPJ000

MCR03EZPJ000

Rohm Semiconductor

RES SMD 0 OHM JUMPER 1/10W 0603

CAT24M01WI-GT3

CAT24M01WI-GT3

ON Semiconductor

IC EEPROM 1M I2C 1MHZ 8SOIC

BLM41PG102SN1L

BLM41PG102SN1L

Murata

FERRITE BEAD 1 KOHM 1806 1LN

SMBJ12CA-TR

SMBJ12CA-TR

STMicroelectronics

TVS DIODE 12V 25.3V SMB

TL431ACLP

TL431ACLP

ON Semiconductor

IC VREF SHUNT ADJ TO92-3

SUD40N08-16-E3

SUD40N08-16-E3

Vishay Siliconix

MOSFET N-CH 80V 40A TO252

FDC6325L

FDC6325L

ON Semiconductor

IC LOAD SWITCH INT 8VIN SSOT-6

MX30LF1G18AC-XKI

MX30LF1G18AC-XKI

Macronix

IC FLASH 1G PARALLEL 63VFBGA

MCP1826-3302E/ET

MCP1826-3302E/ET

Microchip Technology

IC REG LINEAR 3.3V 1A 5DDPAK

HX2305NL

HX2305NL

Pulse Electronics Network

XFRMR MODUL 2PORT POE 1:1 10/100

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247