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NVMFS6H801NWFT1G

NVMFS6H801NWFT1G

For Reference Only

Part Number NVMFS6H801NWFT1G
PNEDA Part # NVMFS6H801NWFT1G
Description TRENCH 8 80V NFET
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,308
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS6H801NWFT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS6H801NWFT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS6H801NWFT1G, NVMFS6H801NWFT1G Datasheet (Total Pages: 6, Size: 159.4 KB)
PDFNVMFS6H801NWFT1G Datasheet Cover
NVMFS6H801NWFT1G Datasheet Page 2 NVMFS6H801NWFT1G Datasheet Page 3 NVMFS6H801NWFT1G Datasheet Page 4 NVMFS6H801NWFT1G Datasheet Page 5 NVMFS6H801NWFT1G Datasheet Page 6

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NVMFS6H801NWFT1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C23A (Ta), 157A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4120pF @ 40V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 166W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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