Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NVMFS6H836NT1G

NVMFS6H836NT1G

For Reference Only

Part Number NVMFS6H836NT1G
PNEDA Part # NVMFS6H836NT1G
Description MOSFET N-CH 80V 6DFN
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,058
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 24 - May 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFS6H836NT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFS6H836NT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFS6H836NT1G, NVMFS6H836NT1G Datasheet (Total Pages: 6, Size: 136.21 KB)
PDFNVMFS6H836NWFT1G Datasheet Cover
NVMFS6H836NWFT1G Datasheet Page 2 NVMFS6H836NWFT1G Datasheet Page 3 NVMFS6H836NWFT1G Datasheet Page 4 NVMFS6H836NWFT1G Datasheet Page 5 NVMFS6H836NWFT1G Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NVMFS6H836NT1G Datasheet
  • where to find NVMFS6H836NT1G
  • ON Semiconductor

  • ON Semiconductor NVMFS6H836NT1G
  • NVMFS6H836NT1G PDF Datasheet
  • NVMFS6H836NT1G Stock

  • NVMFS6H836NT1G Pinout
  • Datasheet NVMFS6H836NT1G
  • NVMFS6H836NT1G Supplier

  • ON Semiconductor Distributor
  • NVMFS6H836NT1G Price
  • NVMFS6H836NT1G Distributor

NVMFS6H836NT1G Specifications

ManufacturerON Semiconductor
Series*
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

The Products You May Be Interested In

IRFR24N15DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

95mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

890pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFP460

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

18.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

270mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

128nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2980pF @ 25V

FET Feature

-

Power Dissipation (Max)

220W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.1mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3760pF @ 25V

FET Feature

-

Power Dissipation (Max)

203W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

MCQ4459-TP

Micro Commercial Co

Manufacturer

Micro Commercial Co

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

72mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

625pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

STH15NB50FI

STMicroelectronics

Manufacturer

STMicroelectronics

Series

PowerMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

10.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3400pF @ 25V

FET Feature

-

Power Dissipation (Max)

80W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOWATT-218

Package / Case

ISOWATT-218-3

Recently Sold

ABM8-166-114.285MHZ-T2

ABM8-166-114.285MHZ-T2

Abracon

CRYSTAL 114.2850MHZ 18PF SMD

3-1462039-1

3-1462039-1

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 12VDC

SMF5.0A

SMF5.0A

Littelfuse

TVS DIODE 5V 9.2V SOD123F

RO-1212S

RO-1212S

Recom Power

DC DC CONVERTER 12V 1W

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

MAX942EUA+T

MAX942EUA+T

Maxim Integrated

IC COMPARATOR R-R 8-UMAX

BAT54AWT1G

BAT54AWT1G

ON Semiconductor

DIODE ARRAY SCHOTTKY 30V SOT323

USB2512I-AEZG

USB2512I-AEZG

Microchip Technology

IC USB 2.0 2PORT HUB CTLR 36-QFN

SDP1108-R

SDP1108-R

Sensirion AG

SENSOR PRESSURE DIFF MODULE

3214W-1-502E

3214W-1-502E

Bourns

TRIMMER 5K OHM 0.25W J LEAD TOP

DF10S-T

DF10S-T

Diodes Incorporated

BRIDGE RECT 1PHASE 1KV 1A DF-S

3314G-1-103E

3314G-1-103E

Bourns

TRIMMER 10K OHM 0.25W GW TOP ADJ