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NVMSD6N303R2G

NVMSD6N303R2G

For Reference Only

Part Number NVMSD6N303R2G
PNEDA Part # NVMSD6N303R2G
Description MOSFET N-CH 30V 6A 8SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,642
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMSD6N303R2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMSD6N303R2G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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NVMSD6N303R2G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds950pF @ 24V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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