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ON5089,115

ON5089,115

For Reference Only

Part Number ON5089,115
PNEDA Part # ON5089-115
Description RF TRANSPONDER SOT343F
Manufacturer NXP
Unit Price Request a Quote
In Stock 27,450
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

ON5089 Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberON5089,115
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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ON5089 Specifications

ManufacturerNXP USA Inc.
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device PackageSOT-343F

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

2.8V

Frequency - Transition

45GHz

Noise Figure (dB Typ @ f)

0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz

Gain

-

Power - Max

220mW

DC Current Gain (hFE) (Min) @ Ic, Vce

155 @ 10mA, 2V

Current - Collector (Ic) (Max)

70mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-343F

Supplier Device Package

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Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

50V

Frequency - Transition

1.2GHz ~ 1.4GHz

Noise Figure (dB Typ @ f)

-

Gain

7dB

Power - Max

88W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 500mA, 5V

Current - Collector (Ic) (Max)

4A

Operating Temperature

200°C (TJ)

Mounting Type

Chassis Mount

Package / Case

55ST

Supplier Device Package

55ST

BFG135AE6327XT

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

6GHz

Noise Figure (dB Typ @ f)

1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz

Gain

9dB ~ 14dB

Power - Max

1W

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 8V

Current - Collector (Ic) (Max)

150mA

Operating Temperature

-

Mounting Type

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Package / Case

TO-261-4, TO-261AA

Supplier Device Package

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2003

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

50V

Frequency - Transition

2GHz

Noise Figure (dB Typ @ f)

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Gain

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Power - Max

12W

DC Current Gain (hFE) (Min) @ Ic, Vce

10 @ 100mA, 5V

Current - Collector (Ic) (Max)

500mA

Operating Temperature

200°C (TJ)

Mounting Type

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Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

-

Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

14GHz

Noise Figure (dB Typ @ f)

1.15dB @ 1.8GHz

Gain

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

Mounting Type

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SC-101, SOT-883

Supplier Device Package

PG-TSLP-3-1

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