PCFQ17P10W
For Reference Only
| Part Number | PCFQ17P10W |
| PNEDA Part # | PCFQ17P10W |
| Description | DIE MOSFET P-CH 100V |
| Manufacturer | MICROSS/On Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,156 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
PCFQ17P10W Resources
| Brand | MICROSS/On Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | PCFQ17P10W |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- PCFQ17P10W Datasheet
- where to find PCFQ17P10W
- MICROSS/On Semiconductor
- MICROSS/On Semiconductor PCFQ17P10W
- PCFQ17P10W PDF Datasheet
- PCFQ17P10W Stock
- PCFQ17P10W Pinout
- Datasheet PCFQ17P10W
- PCFQ17P10W Supplier
- MICROSS/On Semiconductor Distributor
- PCFQ17P10W Price
- PCFQ17P10W Distributor
PCFQ17P10W Specifications
| Manufacturer | MICROSS/On Semiconductor |
| Series | * |
| FET Type | - |
| Technology | - |
| Drain to Source Voltage (Vdss) | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Supplier Device Package | - |
| Package / Case | - |
The Products You May Be Interested In
|
Manufacturer Toshiba Semiconductor and Storage Series U-MOSIX FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 300V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature 150°C Mounting Type Through Hole Supplier Device Package TO-220SIS Package / Case TO-220-3 Full Pack |
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 21.1mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 19.2nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 10V FET Feature - Power Dissipation (Max) 1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TSMT3 Package / Case SC-96 |
Manufacturer Diodes Incorporated Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 3.5V @ 520µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1420pF @ 100V FET Feature - Power Dissipation (Max) 114W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
