Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PDTA113ES,126

PDTA113ES,126

For Reference Only

Part Number PDTA113ES,126
PNEDA Part # PDTA113ES-126
Description TRANS PREBIAS PNP 500MW TO92-3
Manufacturer NXP
Unit Price Request a Quote
In Stock 4,248
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 7 - May 12 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PDTA113ES Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPDTA113ES,126
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
PDTA113ES, PDTA113ES Datasheet (Total Pages: 19, Size: 230.75 KB)
PDFPDTA113ES Datasheet Cover
PDTA113ES Datasheet Page 2 PDTA113ES Datasheet Page 3 PDTA113ES Datasheet Page 4 PDTA113ES Datasheet Page 5 PDTA113ES Datasheet Page 6 PDTA113ES Datasheet Page 7 PDTA113ES Datasheet Page 8 PDTA113ES Datasheet Page 9 PDTA113ES Datasheet Page 10 PDTA113ES Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • PDTA113ES,126 Datasheet
  • where to find PDTA113ES,126
  • NXP

  • NXP PDTA113ES,126
  • PDTA113ES,126 PDF Datasheet
  • PDTA113ES,126 Stock

  • PDTA113ES,126 Pinout
  • Datasheet PDTA113ES,126
  • PDTA113ES,126 Supplier

  • NXP Distributor
  • PDTA113ES,126 Price
  • PDTA113ES,126 Distributor

PDTA113ES Specifications

ManufacturerNXP USA Inc.
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)1 kOhms
Resistor - Emitter Base (R2)1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 40mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition-
Power - Max500mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3

The Products You May Be Interested In

DDTA124XUA-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323

MUN2233T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

230mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SC-59

DDTC144VKA-7-F

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

33 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SC-59-3

RN1109MFV,L3F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

47 kOhms

Resistor - Emitter Base (R2)

22 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

150mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

VESM

DDTA143ZUA-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

Transistor Type

PNP - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

250MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323

Recently Sold

SF-1206F200-2

SF-1206F200-2

Bourns

FUSE BOARD MOUNT 2A 63VDC 1206

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

CEP125NP-1R0MC-HD

CEP125NP-1R0MC-HD

Sumida

FIXED IND 1UH 16.5A 2.5 MOHM SMD

SD066-24-21-011

SD066-24-21-011

Advanced Photonix

SENSOR PHOTODIODE 660NM TO46

BAT41ZFILM

BAT41ZFILM

STMicroelectronics

DIODE SCHOTTKY 100V 200MA SOD123

BC817-16

BC817-16

Diodes Incorporated

TRANS NPN 45V 0.8A SOT23-3

AD8603AUJZ-REEL7

AD8603AUJZ-REEL7

Analog Devices

IC OPAMP GP 1 CIRCUIT TSOT5

74HC4066BQ,115

74HC4066BQ,115

Nexperia

IC SWITCH QUAD 1X2 14DHVQFN

ULN2003ADR2G

ULN2003ADR2G

ON Semiconductor

IC PWR RELAY 7NPN 1:1 16SO

LG Q971-KN-1

LG Q971-KN-1

OSRAM Opto Semiconductors Inc.

LED GREEN DIFFUSED SMD

STM32L476VGT6

STM32L476VGT6

STMicroelectronics

IC MCU 32BIT 1MB FLASH 100LQFP

AD9765ASTZ

AD9765ASTZ

Analog Devices

IC DAC 12BIT A-OUT 48LQFP