PDTB123YQAZ
For Reference Only
| Part Number | PDTB123YQAZ |
| PNEDA Part # | PDTB123YQAZ |
| Description | TRANS PREBIAS PNP 3DFN |
| Manufacturer | Nexperia |
| Unit Price | Request a Quote |
| In Stock | 8,658 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 15 - Jun 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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PDTB123YQAZ Resources
| Brand | Nexperia |
| ECAD Module |
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| Mfr. Part Number | PDTB123YQAZ |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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PDTB123YQAZ Specifications
| Manufacturer | Nexperia USA Inc. |
| Series | Automotive, AEC-Q101 |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 150MHz |
| Power - Max | 325mW |
| Mounting Type | Surface Mount |
| Package / Case | 3-XDFN Exposed Pad |
| Supplier Device Package | DFN1010D-3 |
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Manufacturer Toshiba Semiconductor and Storage Series * Transistor Type - Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) - Resistor - Base (R1) - Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce - Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - Frequency - Transition - Power - Max - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Nexperia USA Inc. Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max) 500nA Frequency - Transition 225MHz Power - Max 320mW Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB |
