Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PHP222NQ04LT,127

PHP222NQ04LT,127

For Reference Only

Part Number PHP222NQ04LT,127
PNEDA Part # PHP222NQ04LT-127
Description MOSFET N-CH 40V 75A TO220AB
Manufacturer NXP
Unit Price Request a Quote
In Stock 3,294
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PHP222NQ04LT Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPHP222NQ04LT,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PHP222NQ04LT, PHP222NQ04LT Datasheet (Total Pages: 13, Size: 93.75 KB)
PDFPHP222NQ04LT Datasheet Cover
PHP222NQ04LT Datasheet Page 2 PHP222NQ04LT Datasheet Page 3 PHP222NQ04LT Datasheet Page 4 PHP222NQ04LT Datasheet Page 5 PHP222NQ04LT Datasheet Page 6 PHP222NQ04LT Datasheet Page 7 PHP222NQ04LT Datasheet Page 8 PHP222NQ04LT Datasheet Page 9 PHP222NQ04LT Datasheet Page 10 PHP222NQ04LT Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • PHP222NQ04LT,127 Datasheet
  • where to find PHP222NQ04LT,127
  • NXP

  • NXP PHP222NQ04LT,127
  • PHP222NQ04LT,127 PDF Datasheet
  • PHP222NQ04LT,127 Stock

  • PHP222NQ04LT,127 Pinout
  • Datasheet PHP222NQ04LT,127
  • PHP222NQ04LT,127 Supplier

  • NXP Distributor
  • PHP222NQ04LT,127 Price
  • PHP222NQ04LT,127 Distributor

PHP222NQ04LT Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs93.6nC @ 5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds7880pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

The Products You May Be Interested In

AON2409

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

32mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

530pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-DFN-EP (2x2)

Package / Case

6-UDFN Exposed Pad

BSC020N03LSGATMA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

STW55NM60ND

STMicroelectronics

Manufacturer

STMicroelectronics

Series

FDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

51A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

60mOhm @ 25.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

5800pF @ 50V

FET Feature

-

Power Dissipation (Max)

350W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

SISC29N20DX1SA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

FDA24N50

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4150pF @ 25V

FET Feature

-

Power Dissipation (Max)

270W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3PN

Package / Case

TO-3P-3, SC-65-3

Recently Sold

MAX9814ETD+T

MAX9814ETD+T

Maxim Integrated

IC AMP AUDIO MONO AB MIC 14TDFN

CDBA540-HF

CDBA540-HF

Comchip Technology

DIODE SCHOTTKY 40V 5A DO214AC

LM2903D

LM2903D

STMicroelectronics

IC COMPARATOR DUAL LP 8-SOIC

PIC12F519-I/SN

PIC12F519-I/SN

Microchip Technology

IC MCU 8BIT 1.5KB FLASH 8SOIC

76SB08ST

76SB08ST

Grayhill Inc.

SWITCH ROCKER DIP SPST 150MA 30V

EPM1270F256I5N

EPM1270F256I5N

Intel

IC CPLD 980MC 6.2NS 256FBGA

74438356150

74438356150

Wurth Electronics

FIXED IND 15UH 1.9A 230MOHM SMD

7A-8.000MAAE-T

7A-8.000MAAE-T

TXC

CRYSTAL 8.0000MHZ 12PF SMD

LFE3-17EA-6MG328C

LFE3-17EA-6MG328C

Lattice Semiconductor Corporation

IC FPGA 116 I/O 328CSBGA

DSPIC30F4013-30I/PT

DSPIC30F4013-30I/PT

Microchip Technology

IC MCU 16BIT 48KB FLASH 44TQFP

TLJT107M010R0900

TLJT107M010R0900

CAP TANT 100UF 20% 10V 1411

NLV32T-068J-EF

NLV32T-068J-EF

TDK

FIXED IND 68NH 450MA 360 MOHM