PHT6N06T,135
For Reference Only
| Part Number | PHT6N06T,135 |
| PNEDA Part # | PHT6N06T-135 |
| Description | MOSFET N-CH 55V 5.5A SOT223 |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 7,632 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
PHT6N06T Resources
| Brand | NXP |
| ECAD Module |
|
| Mfr. Part Number | PHT6N06T,135 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- PHT6N06T,135 Datasheet
- where to find PHT6N06T,135
- NXP
- NXP PHT6N06T,135
- PHT6N06T,135 PDF Datasheet
- PHT6N06T,135 Stock
- PHT6N06T,135 Pinout
- Datasheet PHT6N06T,135
- PHT6N06T,135 Supplier
- NXP Distributor
- PHT6N06T,135 Price
- PHT6N06T,135 Distributor
PHT6N06T Specifications
| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
The Products You May Be Interested In
|
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13.9mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2.7V @ 300µA Gate Charge (Qg) (Max) @ Vgs 24.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 30V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSMT (3.2x3) Package / Case 8-PowerVDFN |
Manufacturer Toshiba Semiconductor and Storage Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 580mOhm @ 2A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V FET Feature - Power Dissipation (Max) 1.6W (Ta), 45W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Advance (5x5) Package / Case 8-PowerVDFN |
Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer Rohm Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 32A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 32A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 42.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2850pF @ 15V FET Feature - Power Dissipation (Max) 3W (Ta), 34.6W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSOP Package / Case 8-PowerTDFN |
Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Surface Mount Supplier Device Package D2PAK-7 Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
