PMBT4403YSX
For Reference Only
| Part Number | PMBT4403YSX |
| PNEDA Part # | PMBT4403YSX |
| Description | TRANS PNP 40V 0.6A SC-881 |
| Manufacturer | Nexperia |
| Unit Price | Request a Quote |
| In Stock | 7,362 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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PMBT4403YSX Resources
| Brand | Nexperia |
| ECAD Module |
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| Mfr. Part Number | PMBT4403YSX |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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PMBT4403YSX Specifications
| Manufacturer | Nexperia USA Inc. |
| Series | Automotive, AEC-Q101 |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Power - Max | 250mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | TO-236AB |
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Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V Power - Max 250mW Frequency - Transition 300MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB |
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Manufacturer Diodes Incorporated Series - Transistor Type PNP Current - Collector (Ic) (Max) 3.5A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 210mV @ 400mA, 4A Current - Collector Cutoff (Max) 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 1V Power - Max 1W Frequency - Transition 120MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case E-Line-3 Supplier Device Package E-Line (TO-92 compatible) |
Manufacturer Toshiba Semiconductor and Storage Series * Transistor Type - Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max - Frequency - Transition - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Diodes Incorporated Series Automotive, AEC-Q101 Transistor Type NPN Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 25V Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 1V Power - Max 300mW Frequency - Transition 300MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
