PMPB48EPAX
For Reference Only
| Part Number | PMPB48EPAX |
| PNEDA Part # | PMPB48EPAX |
| Description | PMPB48EPA/SOT1220/SOT1220 |
| Manufacturer | Nexperia |
| Unit Price | Request a Quote |
| In Stock | 4,392 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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PMPB48EPAX Resources
| Brand | Nexperia |
| ECAD Module |
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| Mfr. Part Number | PMPB48EPAX |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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PMPB48EPAX Specifications
| Manufacturer | Nexperia USA Inc. |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DFN2020MD-6 |
| Package / Case | 6-UDFN Exposed Pad |
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Manufacturer Microsemi Corporation Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id 3.5V @ 960µA Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2267pF @ 25V FET Feature - Power Dissipation (Max) 219W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 [B] Package / Case TO-247-3 |
