Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PMV60EN,215

PMV60EN,215

For Reference Only

Part Number PMV60EN,215
PNEDA Part # PMV60EN-215
Description MOSFET N-CH 30V 4.7A SOT-23
Manufacturer NXP
Unit Price Request a Quote
In Stock 3,096
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 12 - May 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PMV60EN Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPMV60EN,215
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • PMV60EN,215 Datasheet
  • where to find PMV60EN,215
  • NXP

  • NXP PMV60EN,215
  • PMV60EN,215 PDF Datasheet
  • PMV60EN,215 Stock

  • PMV60EN,215 Pinout
  • Datasheet PMV60EN,215
  • PMV60EN,215 Supplier

  • NXP Distributor
  • PMV60EN,215 Price
  • PMV60EN,215 Distributor

PMV60EN Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs55mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs9.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 30V
FET Feature-
Power Dissipation (Max)280mW (Tj)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB (SOT23)
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

56A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

89mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

6V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

350nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9150pF @ 25V

FET Feature

-

Power Dissipation (Max)

1200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

235mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

475pF @ 80V

FET Feature

-

Power Dissipation (Max)

800mW (Ta), 8.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

CSD18536KTTT

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

200A (Ta), 349A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

11430pF @ 30V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DDPAK/TO-263-3

Package / Case

TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

FDPF5N50TYDTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

640pF @ 25V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F (LG-Formed)

Package / Case

TO-220-3 Full Pack, Formed Leads

IRLS3036PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.4mOhm @ 165A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

11210pF @ 50V

FET Feature

-

Power Dissipation (Max)

380W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

74HC273D

74HC273D

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20SOIC

MAX232EWE+

MAX232EWE+

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16SOIC

MAX3221EAE+T

MAX3221EAE+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 16SSOP

LT1963AEST-3.3#TRPBF

LT1963AEST-3.3#TRPBF

Linear Technology/Analog Devices

IC REG LINEAR 3.3V 1.5A SOT223-3

CDRH127/LDNP-220MC

CDRH127/LDNP-220MC

Sumida

FIXED IND 22UH 4.7A 36.4 MOHM

MPU-6000

MPU-6000

TDK InvenSense

IMU ACCEL/GYRO I2C/SPI 24QFN

ADF4001BCPZ-RL7

ADF4001BCPZ-RL7

Analog Devices

IC CLOCK GEN PLL 200MHZ 20LFCSP

ADM3490ARZ

ADM3490ARZ

Analog Devices

IC TRANSCEIVER FULL 1/1 8SOIC

74AHCT125PW,118

74AHCT125PW,118

Nexperia

IC BUF NON-INVERT 5.5V 14TSSOP

AD5624RBRMZ-3REEL7

AD5624RBRMZ-3REEL7

Analog Devices

IC DAC 12BIT V-OUT 10MSOP

IRF9321TRPBF

IRF9321TRPBF

Infineon Technologies

MOSFET P-CH 30V 15A 8-SOIC

LT3080EST#PBF

LT3080EST#PBF

Linear Technology/Analog Devices

IC REG LIN POS ADJ 1.1A SOT223-3