Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PMXB65UPEZ

PMXB65UPEZ

For Reference Only

Part Number PMXB65UPEZ
PNEDA Part # PMXB65UPEZ
Description MOSFET P-CH 12V 3.2A DFN1010D-3G
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 40,560
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PMXB65UPEZ Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPMXB65UPEZ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PMXB65UPEZ, PMXB65UPEZ Datasheet (Total Pages: 15, Size: 732.98 KB)
PDFPMXB65UPEZ Datasheet Cover
PMXB65UPEZ Datasheet Page 2 PMXB65UPEZ Datasheet Page 3 PMXB65UPEZ Datasheet Page 4 PMXB65UPEZ Datasheet Page 5 PMXB65UPEZ Datasheet Page 6 PMXB65UPEZ Datasheet Page 7 PMXB65UPEZ Datasheet Page 8 PMXB65UPEZ Datasheet Page 9 PMXB65UPEZ Datasheet Page 10 PMXB65UPEZ Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • PMXB65UPEZ Datasheet
  • where to find PMXB65UPEZ
  • Nexperia

  • Nexperia PMXB65UPEZ
  • PMXB65UPEZ PDF Datasheet
  • PMXB65UPEZ Stock

  • PMXB65UPEZ Pinout
  • Datasheet PMXB65UPEZ
  • PMXB65UPEZ Supplier

  • Nexperia Distributor
  • PMXB65UPEZ Price
  • PMXB65UPEZ Distributor

PMXB65UPEZ Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Rds On (Max) @ Id, Vgs72mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds634pF @ 6V
FET Feature-
Power Dissipation (Max)317mW (Ta), 8.33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN1010D-3
Package / Case3-XDFN Exposed Pad

The Products You May Be Interested In

IRF1310NSTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

36mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 160W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFB3206PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6540pF @ 50V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SIHP15N60E-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 100V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

DMP213DUFA-7B

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

145mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

10Ohm @ 200mA, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.35nC @ 4.5V

Vgs (Max)

-8V

Input Capacitance (Ciss) (Max) @ Vds

27.2pF @ 10V

FET Feature

-

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-DFN0806-3

Package / Case

3-XFDFN

IPP90N06S4L04AKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.7mOhm @ 90A, 10V

Vgs(th) (Max) @ Id

2.2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

13000pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

Recently Sold

ESD9B3.3ST5G

ESD9B3.3ST5G

ON Semiconductor

TVS DIODE 3.3V 11.5V SOD923

SRN8040TA-100M

SRN8040TA-100M

Bourns

FIXED IND 10UH 4.6A 33 MOHM SMD

S202T01

S202T01

Sharp Microelectronics

SSR RELAY SPST-NO 2A 80-240V

AT24C04D-SSHM-T

AT24C04D-SSHM-T

Microchip Technology

IC EEPROM 4K I2C 1MHZ 8SOIC

PCF8575TS/1,112

PCF8575TS/1,112

NXP

IC I/O EXPANDER I2C 16B 24SSOP

FLZ6V8A

FLZ6V8A

ON Semiconductor

DIODE ZENER 6.5V 500MW SOD80

ACPL-M21L-500E

ACPL-M21L-500E

Broadcom

OPTOISO 3.75KV PUSH PULL 5SO

MMSZ5226B-7-F

MMSZ5226B-7-F

Diodes Incorporated

DIODE ZENER 3.3V 500MW SOD123

KSZ9031RNXIC-TR

KSZ9031RNXIC-TR

Microchip Technology

IC TRANSCEIVER FULL 4/4 48QFN

RB496EATR

RB496EATR

Rohm Semiconductor

DIODE ARRAY SCHOTTKY 20V TSMD5

T520V337M2R5ATE025

T520V337M2R5ATE025

KEMET

CAP TANT POLY 330UF 2.5V 2917

NLC565050T-100K-PF

NLC565050T-100K-PF

TDK

FIXED IND 10UH 690MA 210 MOHM