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PN3563_D74Z

PN3563_D74Z

For Reference Only

Part Number PN3563_D74Z
PNEDA Part # PN3563_D74Z
Description RF TRANS NPN 15V 1.5GHZ TO92-3
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,034
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PN3563_D74Z Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberPN3563_D74Z
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
PN3563_D74Z, PN3563_D74Z Datasheet (Total Pages: 7, Size: 528.99 KB)
PDFPN3563_D75Z Datasheet Cover
PN3563_D75Z Datasheet Page 2 PN3563_D75Z Datasheet Page 3 PN3563_D75Z Datasheet Page 4 PN3563_D75Z Datasheet Page 5 PN3563_D75Z Datasheet Page 6 PN3563_D75Z Datasheet Page 7

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PN3563_D74Z Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Frequency - Transition1.5GHz
Noise Figure (dB Typ @ f)-
Gain14dB ~ 26dB
Power - Max350mW
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 8mA, 10V
Current - Collector (Ic) (Max)50mA
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz

Gain

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Series

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Transistor Type

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.3dB ~ 2.4dB @ 900MHz

Gain

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

120mA

Operating Temperature

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Infineon Technologies

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

4.7V

Frequency - Transition

46GHz

Noise Figure (dB Typ @ f)

0.55dB ~ 1.7dB @ 150MHz ~ 10GHz

Gain

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Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Microsemi

Manufacturer

Microsemi Corporation

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

1.025GHz ~ 1.15GHz

Noise Figure (dB Typ @ f)

-

Gain

8.4dB

Power - Max

220W

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 500mA, 5V

Current - Collector (Ic) (Max)

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Operating Temperature

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Microsemi

Manufacturer

Microsemi Corporation

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

60V

Frequency - Transition

225MHz ~ 400MHz

Noise Figure (dB Typ @ f)

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Gain

7dB ~ 8.5dB

Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

200°C (TJ)

Mounting Type

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Package / Case

55JT

Supplier Device Package

55JT

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