PN3638A_D27Z
For Reference Only
| Part Number | PN3638A_D27Z |
| PNEDA Part # | PN3638A_D27Z |
| Description | TRANS PNP 25V 0.8A TO-92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,730 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 25 - Jun 30 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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PN3638A_D27Z Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | PN3638A_D27Z |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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PN3638A_D27Z Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 35nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 300mA, 2V |
| Power - Max | 625mW |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V Power - Max 500mW Frequency - Transition 300MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 300mA Voltage - Collector Emitter Breakdown (Max) 15V Vce Saturation (Max) @ Ib, Ic 500mV @ 30mA, 300mA Current - Collector Cutoff (Max) 500nA DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 30mA, 400mV Power - Max 625mW Frequency - Transition 350MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer Taiwan Semiconductor Corporation Series - Transistor Type PNP Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V Power - Max 200mW Frequency - Transition 80MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SOT-323 |
Manufacturer Diodes Incorporated Series - Transistor Type PNP Current - Collector (Ic) (Max) 4.5A Voltage - Collector Emitter Breakdown (Max) 12V Vce Saturation (Max) @ Ib, Ic 285mV @ 450mA, 4.5A Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 10mA, 2V Power - Max 2.4W Frequency - Transition 310MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package SOT-89-3 |
