PN930
For Reference Only
| Part Number | PN930 |
| PNEDA Part # | PN930 |
| Description | TRANS NPN 45V 0.1A TO-92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,928 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 26 - Jul 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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PN930 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | PN930 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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PN930 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 10µA, 5V |
| Power - Max | 625mW |
| Frequency - Transition | - |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer Diodes Incorporated Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 25V Vce Saturation (Max) @ Ib, Ic 400mV @ 75mA, 1.5A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V Power - Max 1W Frequency - Transition 300MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-243AA Supplier Device Package SOT-89-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max) 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 625mW Frequency - Transition - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package TO-226 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA Current - Collector Cutoff (Max) 50nA DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V Power - Max 500mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 (TO-206AA) |
