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PSMN3R9-60XSQ

PSMN3R9-60XSQ

For Reference Only

Part Number PSMN3R9-60XSQ
PNEDA Part # PSMN3R9-60XSQ
Description MOSFET N-CH 60V 75A TO-220F
Manufacturer NXP
Unit Price Request a Quote
In Stock 5,634
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN3R9-60XSQ Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPSMN3R9-60XSQ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN3R9-60XSQ, PSMN3R9-60XSQ Datasheet (Total Pages: 14, Size: 349.84 KB)
PDFPSMN3R9-60XSQ Datasheet Cover
PSMN3R9-60XSQ Datasheet Page 2 PSMN3R9-60XSQ Datasheet Page 3 PSMN3R9-60XSQ Datasheet Page 4 PSMN3R9-60XSQ Datasheet Page 5 PSMN3R9-60XSQ Datasheet Page 6 PSMN3R9-60XSQ Datasheet Page 7 PSMN3R9-60XSQ Datasheet Page 8 PSMN3R9-60XSQ Datasheet Page 9 PSMN3R9-60XSQ Datasheet Page 10 PSMN3R9-60XSQ Datasheet Page 11

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PSMN3R9-60XSQ Specifications

ManufacturerNXP USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs103nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5494pF @ 25V
FET Feature-
Power Dissipation (Max)55W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack, Isolated Tab

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