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PSMN4R3-100ES,127

PSMN4R3-100ES,127

For Reference Only

Part Number PSMN4R3-100ES,127
PNEDA Part # PSMN4R3-100ES-127
Description MOSFET N-CH 100V 120A I2PAK
Manufacturer Nexperia
Unit Price Request a Quote
In Stock 6,246
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN4R3-100ES Resources

Brand Nexperia
ECAD Module ECAD
Mfr. Part NumberPSMN4R3-100ES,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN4R3-100ES, PSMN4R3-100ES Datasheet (Total Pages: 14, Size: 802.67 KB)
PDFPSMN4R3-100ES Datasheet Cover
PSMN4R3-100ES Datasheet Page 2 PSMN4R3-100ES Datasheet Page 3 PSMN4R3-100ES Datasheet Page 4 PSMN4R3-100ES Datasheet Page 5 PSMN4R3-100ES Datasheet Page 6 PSMN4R3-100ES Datasheet Page 7 PSMN4R3-100ES Datasheet Page 8 PSMN4R3-100ES Datasheet Page 9 PSMN4R3-100ES Datasheet Page 10 PSMN4R3-100ES Datasheet Page 11

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PSMN4R3-100ES Specifications

ManufacturerNexperia USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9900pF @ 50V
FET Feature-
Power Dissipation (Max)338W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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