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PSMN4R6-100XS,127

PSMN4R6-100XS,127

For Reference Only

Part Number PSMN4R6-100XS,127
PNEDA Part # PSMN4R6-100XS-127
Description MOSFET N-CH 100V 70.4A TO-220F
Manufacturer NXP
Unit Price Request a Quote
In Stock 7,542
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN4R6-100XS Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPSMN4R6-100XS,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN4R6-100XS, PSMN4R6-100XS Datasheet (Total Pages: 16, Size: 356.67 KB)
PDFPSMN4R6-100XS Datasheet Cover
PSMN4R6-100XS Datasheet Page 2 PSMN4R6-100XS Datasheet Page 3 PSMN4R6-100XS Datasheet Page 4 PSMN4R6-100XS Datasheet Page 5 PSMN4R6-100XS Datasheet Page 6 PSMN4R6-100XS Datasheet Page 7 PSMN4R6-100XS Datasheet Page 8 PSMN4R6-100XS Datasheet Page 9 PSMN4R6-100XS Datasheet Page 10 PSMN4R6-100XS Datasheet Page 11

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PSMN4R6-100XS Specifications

ManufacturerNXP USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C70.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs153nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9900pF @ 50V
FET Feature-
Power Dissipation (Max)63.8W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack, Isolated Tab

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