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PSMN8R5-100XSQ

PSMN8R5-100XSQ

For Reference Only

Part Number PSMN8R5-100XSQ
PNEDA Part # PSMN8R5-100XSQ
Description MOSFET N-CH 100V 49A TO-220F
Manufacturer NXP
Unit Price Request a Quote
In Stock 4,248
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN8R5-100XSQ Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPSMN8R5-100XSQ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PSMN8R5-100XSQ, PSMN8R5-100XSQ Datasheet (Total Pages: 15, Size: 345.59 KB)
PDFPSMN8R5-100XSQ Datasheet Cover
PSMN8R5-100XSQ Datasheet Page 2 PSMN8R5-100XSQ Datasheet Page 3 PSMN8R5-100XSQ Datasheet Page 4 PSMN8R5-100XSQ Datasheet Page 5 PSMN8R5-100XSQ Datasheet Page 6 PSMN8R5-100XSQ Datasheet Page 7 PSMN8R5-100XSQ Datasheet Page 8 PSMN8R5-100XSQ Datasheet Page 9 PSMN8R5-100XSQ Datasheet Page 10 PSMN8R5-100XSQ Datasheet Page 11

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PSMN8R5-100XSQ Specifications

ManufacturerNXP USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C49A (Tj)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5512pF @ 50V
FET Feature-
Power Dissipation (Max)55W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack, Isolated Tab

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