Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

R5011FNJTL

R5011FNJTL

For Reference Only

Part Number R5011FNJTL
PNEDA Part # R5011FNJTL
Description MOSFET N-CH 500V 11A LPT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 20,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 21 - Jun 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

R5011FNJTL Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberR5011FNJTL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
R5011FNJTL, R5011FNJTL Datasheet (Total Pages: 14, Size: 3,043.16 KB)
PDFR5011FNJTL Datasheet Cover
R5011FNJTL Datasheet Page 2 R5011FNJTL Datasheet Page 3 R5011FNJTL Datasheet Page 4 R5011FNJTL Datasheet Page 5 R5011FNJTL Datasheet Page 6 R5011FNJTL Datasheet Page 7 R5011FNJTL Datasheet Page 8 R5011FNJTL Datasheet Page 9 R5011FNJTL Datasheet Page 10 R5011FNJTL Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • R5011FNJTL Datasheet
  • where to find R5011FNJTL
  • Rohm Semiconductor

  • Rohm Semiconductor R5011FNJTL
  • R5011FNJTL PDF Datasheet
  • R5011FNJTL Stock

  • R5011FNJTL Pinout
  • Datasheet R5011FNJTL
  • R5011FNJTL Supplier

  • Rohm Semiconductor Distributor
  • R5011FNJTL Price
  • R5011FNJTL Distributor

R5011FNJTL Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs520mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLPTS
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

SISA34DN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.7mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 15V

FET Feature

-

Power Dissipation (Max)

20.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

FDPF4N60NZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET-II™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 1.9A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

510pF @ 25V

FET Feature

-

Power Dissipation (Max)

28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

SI7716ADN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

23nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

846pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.5W (Ta), 27.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

IRFL214

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

790mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 470mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.2nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

140pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 3.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA

IPD50N08S413ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

Automotive, AEC-Q101, OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 33µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1711pF @ 25V

FET Feature

-

Power Dissipation (Max)

72W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3-313

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

5CEFA4U19C8N

5CEFA4U19C8N

Intel

IC FPGA 224 I/O 484UBGA

CP2105-F01-GM

CP2105-F01-GM

Silicon Labs

IC SGL USB-DL UART BRIDGE 24QFN

4608X-102-103LF

4608X-102-103LF

Bourns

RES ARRAY 4 RES 10K OHM 8SIP

LTC2870IFE#PBF

LTC2870IFE#PBF

Linear Technology/Analog Devices

IC TRANSCEIVER FULL 2/2 28TSSOP

PA95

PA95

Apex Microtechnology

IC OPAMP POWER 1 CIRCUIT 8SIP

S29JL064J60TFI003

S29JL064J60TFI003

Cypress Semiconductor

IC FLASH 64M PARALLEL 48TSOP

CY2304SXI-1

CY2304SXI-1

Cypress Semiconductor

IC CLK ZDB 4OUT 133MHZ 8SOIC

MT41K512M16HA-107:A

MT41K512M16HA-107:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 96FBGA

ADM695AR

ADM695AR

Analog Devices

IC SUPER MPU 4.65 100MA 16SOIC

MD2369A

MD2369A

Central Semiconductor Corp

TRANS 2NPN 40V 0.5A TO-78

BYV27-100-TR

BYV27-100-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 100V 2A SOD57

AQY272A

AQY272A

Panasonic Electric Works

SSR RELAY SPST-NO 2A 0-60V