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R6025FNZ1C9

R6025FNZ1C9

For Reference Only

Part Number R6025FNZ1C9
PNEDA Part # R6025FNZ1C9
Description MOSFET N-CH 600V 25A TO247
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 15,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

R6025FNZ1C9 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberR6025FNZ1C9
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
R6025FNZ1C9, R6025FNZ1C9 Datasheet (Total Pages: 15, Size: 862.11 KB)
PDFR6025FNZ1C9 Datasheet Cover
R6025FNZ1C9 Datasheet Page 2 R6025FNZ1C9 Datasheet Page 3 R6025FNZ1C9 Datasheet Page 4 R6025FNZ1C9 Datasheet Page 5 R6025FNZ1C9 Datasheet Page 6 R6025FNZ1C9 Datasheet Page 7 R6025FNZ1C9 Datasheet Page 8 R6025FNZ1C9 Datasheet Page 9 R6025FNZ1C9 Datasheet Page 10 R6025FNZ1C9 Datasheet Page 11

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R6025FNZ1C9 Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs180mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs85nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3500pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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