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RCD041N25TL

RCD041N25TL

For Reference Only

Part Number RCD041N25TL
PNEDA Part # RCD041N25TL
Description MOSFET N-CH 250V 4A CPT3
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 5,094
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RCD041N25TL Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRCD041N25TL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RCD041N25TL, RCD041N25TL Datasheet (Total Pages: 14, Size: 848.43 KB)
PDFRCD041N25TL Datasheet Cover
RCD041N25TL Datasheet Page 2 RCD041N25TL Datasheet Page 3 RCD041N25TL Datasheet Page 4 RCD041N25TL Datasheet Page 5 RCD041N25TL Datasheet Page 6 RCD041N25TL Datasheet Page 7 RCD041N25TL Datasheet Page 8 RCD041N25TL Datasheet Page 9 RCD041N25TL Datasheet Page 10 RCD041N25TL Datasheet Page 11

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RCD041N25TL Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
FET Feature-
Power Dissipation (Max)850mW (Ta), 20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageCPT3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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