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RCD080N25TL

RCD080N25TL

For Reference Only

Part Number RCD080N25TL
PNEDA Part # RCD080N25TL
Manufacturer Rohm Semiconductor
Description MOSFET N-CH 250V 8A SOT-428
Unit Price
  • 1$ 0.0000
  • 100$ 0.0000
  • 500$ 0.0000
  • 1000$ 0.0000
  • 2500$ 0.0000
In Stock 4,003
Warehouses USA, Europe, China, Hong Kong SAR
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery
Estimated Delivery Jan 26 - Jan 31 (Choose Expedited Shipping)
Warranty Up to 1 year [PNEDA-Warranty]*

RCD080N25TL Resources

Brand Rohm Semiconductor
Mfr. Part NumberRCD080N25TL
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RCD080N25TL, RCD080N25TL Datasheet (Total Pages: 8, Size: 622.34 KB)
PDFRCD080N25TL Datasheet Cover
RCD080N25TL Datasheet Page 2 RCD080N25TL Datasheet Page 3 RCD080N25TL Datasheet Page 4 RCD080N25TL Datasheet Page 5 RCD080N25TL Datasheet Page 6 RCD080N25TL Datasheet Page 7 RCD080N25TL Datasheet Page 8

RCD080N25TL Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1440pF @ 25V
FET Feature-
Power Dissipation (Max)850mW (Ta), 20W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageCPT3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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