Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RD3T050CNTL1

RD3T050CNTL1

For Reference Only

Part Number RD3T050CNTL1
PNEDA Part # RD3T050CNTL1
Description NCH 200V 5A POWER MOSFET
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 3,420
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RD3T050CNTL1 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRD3T050CNTL1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RD3T050CNTL1 Datasheet
  • where to find RD3T050CNTL1
  • Rohm Semiconductor

  • Rohm Semiconductor RD3T050CNTL1
  • RD3T050CNTL1 PDF Datasheet
  • RD3T050CNTL1 Stock

  • RD3T050CNTL1 Pinout
  • Datasheet RD3T050CNTL1
  • RD3T050CNTL1 Supplier

  • Rohm Semiconductor Distributor
  • RD3T050CNTL1 Price
  • RD3T050CNTL1 Distributor

RD3T050CNTL1 Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs760mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8.3nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
FET Feature-
Power Dissipation (Max)29W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

100mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

110Ohm @ 50mA, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

1.1W (Ta), 25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

70mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3.9V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

Super Junction

Power Dissipation (Max)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

i4-Pac™-5 (3 Leads)

BUZ31L H

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

13.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

200mOhm @ 7A, 5V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600pF @ 25V

FET Feature

-

Power Dissipation (Max)

95W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

AUIRFSL8403

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

123A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 70A, 10V

Vgs(th) (Max) @ Id

3.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

93nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3183pF @ 25V

FET Feature

-

Power Dissipation (Max)

99W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRLMS5703TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro6™(SOT23-6)

Package / Case

SOT-23-6

Recently Sold

CD143A-SR70

CD143A-SR70

Bourns

TVS DIODE 7V SOT143

NCP1055ST100T3G

NCP1055ST100T3G

ON Semiconductor

IC CONV PWM UVLO HV SOT223-4

DG212BDY

DG212BDY

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

AD7942BRMZ

AD7942BRMZ

Analog Devices

IC ADC 14BIT SAR 10MSOP

MMBT2222AT

MMBT2222AT

ON Semiconductor

TRANS NPN 40V 0.6A SOT523F

SMBJ12A

SMBJ12A

TVS DIODE 12V 19.9V SMB

NAU7802SGI

NAU7802SGI

Nuvoton Technology

IC ADC 24BIT SIGMA-DELTA 16SOP

2843010402

2843010402

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

HCPL-7710-000E

HCPL-7710-000E

Broadcom

OPTOISO 3.75KV PUSH PULL 8DIP

IS62WV51216BLL-55TLI

IS62WV51216BLL-55TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 44TSOP II

ADR421ARZ

ADR421ARZ

Analog Devices

IC VREF SERIES 2.5V 8SOIC

MM74C923WM

MM74C923WM

ON Semiconductor

IC ENCODER 20-KEY 20-SOIC