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RF4E070BNTR

RF4E070BNTR

For Reference Only

Part Number RF4E070BNTR
PNEDA Part # RF4E070BNTR
Description MOSFET N-CH 30V 7A 8-HUML
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 8,154
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 14 - Jun 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RF4E070BNTR Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRF4E070BNTR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RF4E070BNTR, RF4E070BNTR Datasheet (Total Pages: 13, Size: 2,336.81 KB)
PDFRF4E070BNTR Datasheet Cover
RF4E070BNTR Datasheet Page 2 RF4E070BNTR Datasheet Page 3 RF4E070BNTR Datasheet Page 4 RF4E070BNTR Datasheet Page 5 RF4E070BNTR Datasheet Page 6 RF4E070BNTR Datasheet Page 7 RF4E070BNTR Datasheet Page 8 RF4E070BNTR Datasheet Page 9 RF4E070BNTR Datasheet Page 10 RF4E070BNTR Datasheet Page 11

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RF4E070BNTR Specifications

ManufacturerRohm Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs28.6mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.9nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds410pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageHUML2020L8
Package / Case8-PowerUDFN

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