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RFD12N06RLESM9A

RFD12N06RLESM9A

For Reference Only

Part Number RFD12N06RLESM9A
PNEDA Part # RFD12N06RLESM9A
Description MOSFET N-CH 60V 18A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 24,222
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 17 - Jun 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RFD12N06RLESM9A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberRFD12N06RLESM9A
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RFD12N06RLESM9A, RFD12N06RLESM9A Datasheet (Total Pages: 12, Size: 868.48 KB)
PDFRFD12N06RLESM9A Datasheet Cover
RFD12N06RLESM9A Datasheet Page 2 RFD12N06RLESM9A Datasheet Page 3 RFD12N06RLESM9A Datasheet Page 4 RFD12N06RLESM9A Datasheet Page 5 RFD12N06RLESM9A Datasheet Page 6 RFD12N06RLESM9A Datasheet Page 7 RFD12N06RLESM9A Datasheet Page 8 RFD12N06RLESM9A Datasheet Page 9 RFD12N06RLESM9A Datasheet Page 10 RFD12N06RLESM9A Datasheet Page 11

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RFD12N06RLESM9A Specifications

ManufacturerON Semiconductor
SeriesUltraFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs63mOhm @ 18A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds485pF @ 25V
FET Feature-
Power Dissipation (Max)49W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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