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RGS60TS65HRC11

RGS60TS65HRC11

For Reference Only

Part Number RGS60TS65HRC11
PNEDA Part # RGS60TS65HRC11
Description 650V 30A FIELD STOP TRENCH IGBT.
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 9,420
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGS60TS65HRC11 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGS60TS65HRC11
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGS60TS65HRC11 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)56A
Current - Collector Pulsed (Icm)90A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A
Power - Max223W
Switching Energy660µJ (on), 810µJ (off)
Input TypeStandard
Gate Charge36nC
Td (on/off) @ 25°C28ns/104ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247N

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 40A

Power - Max

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Switching Energy

380µJ (off)

Input Type

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Gate Charge

138nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

13A

Current - Collector Pulsed (Icm)

52A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6.5A

Power - Max

60W

Switching Energy

160µJ (on), 130µJ (off)

Input Type

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Gate Charge

27nC

Td (on/off) @ 25°C

39ns/93ns

Test Condition

480V, 6.5A, 50Ohm, 15V

Reverse Recovery Time (trr)

37ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

330V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

42nC

Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

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Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 4A

Power - Max

65W

Switching Energy

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Input Type

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Gate Charge

13.5nC

Td (on/off) @ 25°C

17ns/69ns

Test Condition

400V, 4A, 50Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Supplier Device Package

TO-262

Manufacturer

IXYS

Series

BIMOSFET™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1700V

Current - Collector (Ic) (Max)

42A

Current - Collector Pulsed (Icm)

265A

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 21A

Power - Max

357W

Switching Energy

3.43mJ (on), 430µJ (off)

Input Type

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Gate Charge

188nC

Td (on/off) @ 25°C

19ns/200ns

Test Condition

850V, 21A, 1Ohm, 15V

Reverse Recovery Time (trr)

330ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

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