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RGT30NS65DGC9

RGT30NS65DGC9

For Reference Only

Part Number RGT30NS65DGC9
PNEDA Part # RGT30NS65DGC9
Description IGBT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 14,280
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGT30NS65DGC9 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGT30NS65DGC9
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGT30NS65DGC9 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)45A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 15A
Power - Max133W
Switching Energy-
Input TypeStandard
Gate Charge32nC
Td (on/off) @ 25°C18ns/64ns
Test Condition400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)55ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

433V, 45A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Manufacturer

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Current - Collector (Ic) (Max)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 60A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

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Infineon Technologies

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IGBT Type

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Gate Charge

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Td (on/off) @ 25°C

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