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RGTV60TK65GVC11

RGTV60TK65GVC11

For Reference Only

Part Number RGTV60TK65GVC11
PNEDA Part # RGTV60TK65GVC11
Description 650V 30A FIELD STOP TRENCH IGBT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 11,352
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGTV60TK65GVC11 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGTV60TK65GVC11
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGTV60TK65GVC11 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)33A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 30A
Power - Max76W
Switching Energy570µJ (on), 500µJ (off)
Input TypeStandard
Gate Charge64nC
Td (on/off) @ 25°C33ns/105ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PFM, SC-93-3
Supplier Device PackageTO-3PFM

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Power - Max

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Td (on/off) @ 25°C

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Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Gate Charge

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Operating Temperature

-55°C ~ 175°C (TJ)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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Supplier Device Package

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