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RGTV60TS65DGC11

RGTV60TS65DGC11

For Reference Only

Part Number RGTV60TS65DGC11
PNEDA Part # RGTV60TS65DGC11
Description 650V 30A FIELD STOP TRENCH IGBT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 10,632
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 15 - May 20 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGTV60TS65DGC11 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGTV60TS65DGC11
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGTV60TS65DGC11 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 30A
Power - Max194W
Switching Energy570µJ (on), 500µJ (off)
Input TypeStandard
Gate Charge64nC
Td (on/off) @ 25°C33ns/105ns
Test Condition400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)95ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247N

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

223W

Switching Energy

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Input Type

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Gate Charge

36nC

Td (on/off) @ 25°C

28ns/104ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

TO-247N

Manufacturer

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Series

GenX3™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

280A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 32A

Power - Max

300W

Switching Energy

450µJ (on), 660µJ (off)

Input Type

Standard

Gate Charge

115nC

Td (on/off) @ 25°C

22ns/130ns

Test Condition

480V, 30A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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IRG7CH20K10EF

Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

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Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

46A

Current - Collector Pulsed (Icm)

110A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 24A

Power - Max

240W

Switching Energy

1.35mJ (on), 400µJ (off)

Input Type

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Gate Charge

40nC

Td (on/off) @ 25°C

20ns/73ns

Test Condition

450V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

Manufacturer

IXYS

Series

HiPerFAST™, Lightspeed™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

14A

Current - Collector Pulsed (Icm)

30A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 7A

Power - Max

75W

Switching Energy

120µJ (off)

Input Type

Standard

Gate Charge

25nC

Td (on/off) @ 25°C

10ns/65ns

Test Condition

480V, 7A, 18Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263 (IXGA)

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