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RGTVX6TS65DGC11

RGTVX6TS65DGC11

For Reference Only

Part Number RGTVX6TS65DGC11
PNEDA Part # RGTVX6TS65DGC11
Description IGBT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 2,808
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGTVX6TS65DGC11 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGTVX6TS65DGC11
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGTVX6TS65DGC11 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)144A
Current - Collector Pulsed (Icm)320A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 80A
Power - Max404W
Switching Energy2.65mJ (on), 1.8mJ (off)
Input TypeStandard
Gate Charge171nC
Td (on/off) @ 25°C45ns/201ns
Test Condition400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr)109ns
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247N

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Input Type

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Test Condition

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Reverse Recovery Time (trr)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

400V, 30A, 10Ohm, 15V

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

104nC

Td (on/off) @ 25°C

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Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

102ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Package / Case

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