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RGW80TK65GVC11

RGW80TK65GVC11

For Reference Only

Part Number RGW80TK65GVC11
PNEDA Part # RGW80TK65GVC11
Description 650V 40A FIELD STOP TRENCH IGBT
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 10,332
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RGW80TK65GVC11 Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberRGW80TK65GVC11
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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RGW80TK65GVC11 Specifications

ManufacturerRohm Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)39A
Current - Collector Pulsed (Icm)160A
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 40A
Power - Max81W
Switching Energy760µJ (on), 720µJ (off)
Input TypeStandard
Gate Charge110nC
Td (on/off) @ 25°C44ns/143ns
Test Condition400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PFM, SC-93-3
Supplier Device PackageTO-3PFM

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

75A

Vce(on) (Max) @ Vge, Ic

6V @ 15V, 16A

Power - Max

250W

Switching Energy

2.97mJ (on), 790µJ (off)

Input Type

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Gate Charge

140nC

Td (on/off) @ 25°C

21ns/336ns

Test Condition

850V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

200ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 25A

Power - Max

428W

Switching Energy

1.74mJ (on), 560µJ (off)

Input Type

Standard

Gate Charge

225nC

Td (on/off) @ 25°C

40ns/490ns

Test Condition

600V, 25A, 23Ohm, 15V

Reverse Recovery Time (trr)

60ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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STMicroelectronics

Manufacturer

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Series

PowerMESH™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

3.85V @ 15V, 30A

Power - Max

240W

Switching Energy

3.7mJ (on), 5.7mJ (off)

Input Type

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Gate Charge

126nC

Td (on/off) @ 25°C

48ns/338ns

Test Condition

960V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

84ns

Operating Temperature

-55°C ~ 125°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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IXBH20N300

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

3000V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

140A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 20A

Power - Max

250W

Switching Energy

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Input Type

Standard

Gate Charge

105nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

1.35µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXBH)

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

300V

Current - Collector (Ic) (Max)

400A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXGK)

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