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RJH1CV7DPK-00#T0

RJH1CV7DPK-00#T0

For Reference Only

Part Number RJH1CV7DPK-00#T0
PNEDA Part # RJH1CV7DPK-00-T0
Description IGBT 1200V 70A 320W TO-3P
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,886
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJH1CV7DPK-00#T0 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJH1CV7DPK-00#T0
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
RJH1CV7DPK-00#T0, RJH1CV7DPK-00#T0 Datasheet (Total Pages: 10, Size: 120.42 KB)
PDFRJH1CV7DPK-00#T0 Datasheet Cover
RJH1CV7DPK-00#T0 Datasheet Page 2 RJH1CV7DPK-00#T0 Datasheet Page 3 RJH1CV7DPK-00#T0 Datasheet Page 4 RJH1CV7DPK-00#T0 Datasheet Page 5 RJH1CV7DPK-00#T0 Datasheet Page 6 RJH1CV7DPK-00#T0 Datasheet Page 7 RJH1CV7DPK-00#T0 Datasheet Page 8 RJH1CV7DPK-00#T0 Datasheet Page 9 RJH1CV7DPK-00#T0 Datasheet Page 10

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RJH1CV7DPK-00#T0 Specifications

ManufacturerRenesas Electronics America
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 35A
Power - Max320W
Switching Energy3.2mJ (on), 2.5mJ (off)
Input TypeStandard
Gate Charge166nC
Td (on/off) @ 25°C53ns/185ns
Test Condition600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)200ns
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P

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Current - Collector (Ic) (Max)

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Current - Collector (Ic) (Max)

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Test Condition

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Operating Temperature

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Mounting Type

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

120µJ (on), 150µJ (off)

Input Type

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Gate Charge

76nC

Td (on/off) @ 25°C

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Test Condition

200V, 21A, 10Ohm, 15V

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