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RJH65T46DPQ-A0#T0

RJH65T46DPQ-A0#T0

For Reference Only

Part Number RJH65T46DPQ-A0#T0
PNEDA Part # RJH65T46DPQ-A0-T0
Description IGBT TRENCH 650V 80A TO247A
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 4,734
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJH65T46DPQ-A0#T0 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJH65T46DPQ-A0#T0
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
RJH65T46DPQ-A0#T0, RJH65T46DPQ-A0#T0 Datasheet (Total Pages: 10, Size: 340.33 KB)
PDFRJH65T46DPQ-A0#T0 Datasheet Cover
RJH65T46DPQ-A0#T0 Datasheet Page 2 RJH65T46DPQ-A0#T0 Datasheet Page 3 RJH65T46DPQ-A0#T0 Datasheet Page 4 RJH65T46DPQ-A0#T0 Datasheet Page 5 RJH65T46DPQ-A0#T0 Datasheet Page 6 RJH65T46DPQ-A0#T0 Datasheet Page 7 RJH65T46DPQ-A0#T0 Datasheet Page 8 RJH65T46DPQ-A0#T0 Datasheet Page 9 RJH65T46DPQ-A0#T0 Datasheet Page 10

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RJH65T46DPQ-A0#T0 Specifications

ManufacturerRenesas Electronics America
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)80A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 40A
Power - Max340.9W
Switching Energy450µJ (on), 550µJ (off)
Input TypeStandard
Gate Charge138nC
Td (on/off) @ 25°C45ns/170ns
Test Condition400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)100ns
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247A

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 25A

Power - Max

200W

Switching Energy

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Input Type

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Gate Charge

130nC

Td (on/off) @ 25°C

100ns/650ns

Test Condition

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

74A

Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

Power - Max

250W

Switching Energy

420µJ (on), 100µJ (off)

Input Type

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Gate Charge

95nC

Td (on/off) @ 25°C

22ns/160ns

Test Condition

400V, 40A, 15Ohm, 15V

Reverse Recovery Time (trr)

83ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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IXYS

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

65A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

300V, 30A, 22Ohm, 15V

Reverse Recovery Time (trr)

70ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

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Supplier Device Package

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Manufacturer

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Series

HiPerFAST™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

400W

Switching Energy

4.7mJ (off)

Input Type

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Gate Charge

135nC

Td (on/off) @ 25°C

20ns/350ns

Test Condition

720V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXGH)

IRGS4045DTRRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 6A

Power - Max

77W

Switching Energy

56µJ (on), 122µJ (off)

Input Type

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Gate Charge

19.5nC

Td (on/off) @ 25°C

27ns/75ns

Test Condition

400V, 6A, 47Ohm, 15V

Reverse Recovery Time (trr)

74ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D²PAK

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