RJH65T47DPQ-A0#T0
For Reference Only
| Part Number | RJH65T47DPQ-A0#T0 |
| PNEDA Part # | RJH65T47DPQ-A0-T0 |
| Description | IGBT TRENCH 650V 90A TO247A |
| Manufacturer | Renesas Electronics America |
| Unit Price | Request a Quote |
| In Stock | 6,372 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RJH65T47DPQ-A0#T0 Resources
| Brand | Renesas Electronics America |
| ECAD Module |
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| Mfr. Part Number | RJH65T47DPQ-A0#T0 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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RJH65T47DPQ-A0#T0 Specifications
| Manufacturer | Renesas Electronics America |
| Series | - |
| IGBT Type | Trench |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 90A |
| Current - Collector Pulsed (Icm) | - |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 45A |
| Power - Max | 375W |
| Switching Energy | 520µJ (on), 560µJ (off) |
| Input Type | Standard |
| Gate Charge | 127nC |
| Td (on/off) @ 25°C | 45ns/190ns |
| Test Condition | 400V, 45A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 100ns |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247A |
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Manufacturer STMicroelectronics Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A Power - Max 37W Switching Energy 209µJ (on), 261µJ (off) Input Type Standard Gate Charge 115nC Td (on/off) @ 25°C 42.5ns/177ns Test Condition 400V, 20A, 10Ohm, 15V Reverse Recovery Time (trr) 90ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220FP |
Manufacturer Global Power Technologies Group Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 120A Current - Collector Pulsed (Icm) 180A Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 60A Power - Max 347W Switching Energy 2.66mJ (on), 1.53mJ (off) Input Type Standard Gate Charge 225nC Td (on/off) @ 25°C 45ns/150ns Test Condition 400V, 60A, 10Ohm, 15V Reverse Recovery Time (trr) 140ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3 Supplier Device Package TO-3PN |
Manufacturer Microsemi Corporation Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 20A Power - Max 136W Switching Energy 230µJ (on), 580µJ (off) Input Type Standard Gate Charge 120nC Td (on/off) @ 25°C 9ns/140ns Test Condition 400V, 20A, 4.3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
