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RJK0629DPE-00#J3

RJK0629DPE-00#J3

For Reference Only

Part Number RJK0629DPE-00#J3
PNEDA Part # RJK0629DPE-00-J3
Description MOSFET N-CH 60V 85A LDPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 6,624
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 19 - Jun 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK0629DPE-00#J3 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK0629DPE-00#J3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK0629DPE-00#J3, RJK0629DPE-00#J3 Datasheet (Total Pages: 7, Size: 100.12 KB)
PDFRJK0629DPE-00#J3 Datasheet Cover
RJK0629DPE-00#J3 Datasheet Page 2 RJK0629DPE-00#J3 Datasheet Page 3 RJK0629DPE-00#J3 Datasheet Page 4 RJK0629DPE-00#J3 Datasheet Page 5 RJK0629DPE-00#J3 Datasheet Page 6 RJK0629DPE-00#J3 Datasheet Page 7

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RJK0629DPE-00#J3 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C85A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.5mOhm @ 43A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs85nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4100pF @ 10V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-LDPAK
Package / CaseSC-83

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