Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

RJK0652DPB-00#J5

RJK0652DPB-00#J5

For Reference Only

Part Number RJK0652DPB-00#J5
PNEDA Part # RJK0652DPB-00-J5
Description MOSFET N-CH 60V 35A LFPAK
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 3,960
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 10 - May 15 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

RJK0652DPB-00#J5 Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberRJK0652DPB-00#J5
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
RJK0652DPB-00#J5, RJK0652DPB-00#J5 Datasheet (Total Pages: 7, Size: 98.52 KB)
PDFRJK0652DPB-00#J5 Datasheet Cover
RJK0652DPB-00#J5 Datasheet Page 2 RJK0652DPB-00#J5 Datasheet Page 3 RJK0652DPB-00#J5 Datasheet Page 4 RJK0652DPB-00#J5 Datasheet Page 5 RJK0652DPB-00#J5 Datasheet Page 6 RJK0652DPB-00#J5 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • RJK0652DPB-00#J5 Datasheet
  • where to find RJK0652DPB-00#J5
  • Renesas Electronics America

  • Renesas Electronics America RJK0652DPB-00#J5
  • RJK0652DPB-00#J5 PDF Datasheet
  • RJK0652DPB-00#J5 Stock

  • RJK0652DPB-00#J5 Pinout
  • Datasheet RJK0652DPB-00#J5
  • RJK0652DPB-00#J5 Supplier

  • Renesas Electronics America Distributor
  • RJK0652DPB-00#J5 Price
  • RJK0652DPB-00#J5 Distributor

RJK0652DPB-00#J5 Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C35A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs29nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4100pF @ 10V
FET Feature-
Power Dissipation (Max)55W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK
Package / CaseSC-100, SOT-669

The Products You May Be Interested In

SIS322DNT-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

38.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21.5nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 19.8W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

SI7404DN-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

8.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 13.3A, 10V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8

Package / Case

PowerPAK® 1212-8

IRF7450TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

170mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

940pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

BSD316SNH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

160mOhm @ 1.4A, 10V

Vgs(th) (Max) @ Id

2V @ 3.7µA

Gate Charge (Qg) (Max) @ Vgs

0.6nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

94pF @ 15V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-SOT363-6

Package / Case

6-VSSOP, SC-88, SOT-363

IXFX55N50

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

80mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

330nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9400pF @ 25V

FET Feature

-

Power Dissipation (Max)

625W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

Recently Sold

NUP2105LT1G

NUP2105LT1G

ON Semiconductor

TVS DIODE 24V 44V SOT23-3

ADUM1401ARWZ

ADUM1401ARWZ

Analog Devices

DGTL ISO 2.5KV GEN PURP 16SOIC

ADP2384ACPZN-R7

ADP2384ACPZN-R7

Analog Devices

IC REG BUCK ADJ 4A 24LFCSP

HCPL-0531-500E

HCPL-0531-500E

Broadcom

OPTOISO 3.75KV 2CH TRANS 8SOIC

MAX9011EUT+T

MAX9011EUT+T

Maxim Integrated

IC COMPARATOR TTL SOT23-6

3-1462039-1

3-1462039-1

TE Connectivity Potter & Brumfield Relays

RELAY TELECOM DPDT 2A 12VDC

74HC273D

74HC273D

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20SOIC

74HC4051D

74HC4051D

Toshiba Semiconductor and Storage

IC MUX 8:1 4 OHM 16SOIC

SRV05-4.TCT

SRV05-4.TCT

Semtech

TVS DIODE 5V 17.5V SOT23-6

MMA7660FCT

MMA7660FCT

NXP

ACCELEROMETER 1.5G I2C 10DFN

2N3906BU

2N3906BU

ON Semiconductor

TRANS PNP 40V 0.2A TO-92

TAJA106K016RNJ

TAJA106K016RNJ

CAP TANT 10UF 10% 16V 1206