RJK2006DPE-00#J3
For Reference Only
| Part Number | RJK2006DPE-00#J3 |
| PNEDA Part # | RJK2006DPE-00-J3 |
| Description | MOSFET N-CH 200V 40A LDPAK |
| Manufacturer | Renesas Electronics America |
| Unit Price | Request a Quote |
| In Stock | 8,154 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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RJK2006DPE-00#J3 Resources
| Brand | Renesas Electronics America |
| ECAD Module |
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| Mfr. Part Number | RJK2006DPE-00#J3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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RJK2006DPE-00#J3 Specifications
| Manufacturer | Renesas Electronics America |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-LDPAK |
| Package / Case | SC-83 |
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